FY2024 second MU-TECH research grant · Hardware
Material Gate wins JPY3m grant for low-power memory materials
The project develops thin-film capacitor devices based on single-molecule materials.
Material Gate Inc. has won a JPY3 million MU-TECH research grant, announced on February 17, 2025. The selected project develops single-molecule dielectric thin-film capacitor devices for next-generation low-power memory.
The Hiroshima University startup commercialises single-molecule electret materials and licenses related device technology. It targets applications including memory, capacitors and sensors.
Use of funds
Single-molecule dielectric thin-film capacitor devices for low-power memory
Funding history
FY2024 second MU-TECH research grant · This round¥3M